Characterize SiC Power Devices with Confidence: A Guide to Transient Testing & Power Cycling
Wide bandgap devices like SiC MOSFETs promise high efficiency—but they come with complex testing demands. This white paper shows how Simcenter MicReD Power Testers offer breakthrough thermal transient testing and power cycling for next-gen semiconductors. Learn how to overcome SiC-specific challenges like high forward voltages, inductive spikes, and parasitic currents while accurately assessing lifetime and degradation paths.
Key Takeaways:
- Thermal transient testing reveals real-time temperature behavior via TSPs like Vth or RDSON.
- Simcenter tools detect bond wire and die-attach degradation via structure-function analysis.
- Supports AQG-324 guidelines for power module qualification with configurable failure criteria.
- Enables reliable lifetime prediction and thermal stress modeling across advanced power applications
White Paper from 
If your Download does not start Automatically, Click Download Whitepaper